The Resource Advances in silicon carbide processing and applications, Stephen E. Saddow, Anant Agarwal, editors

Advances in silicon carbide processing and applications, Stephen E. Saddow, Anant Agarwal, editors

Label
Advances in silicon carbide processing and applications
Title
Advances in silicon carbide processing and applications
Statement of responsibility
Stephen E. Saddow, Anant Agarwal, editors
Contributor
Editor
Subject
Language
eng
Summary
Annotation Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications
Member of
Cataloging source
N$T
Dewey number
621.3815/2
Illustrations
illustrations
Index
index present
LC call number
TK7871.15.S56
LC item number
A38 2004eb
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
Series statement
Semiconductor materials and devices series
Label
Advances in silicon carbide processing and applications, Stephen E. Saddow, Anant Agarwal, editors
Publication
Copyright
Bibliography note
Includes bibliographical references and index
http://library.link/vocab/branchCode
  • net
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
mixed
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
1. Silicon Carbide Overview / Olle Kordina and Stephen E. Saddow -- 2. High-Temperature SiC-FET Chemical Gas Sensors / Anita Lloyd Spetz, Shinji Nakagomi, and Susan Savage -- 3. Silicon Carbide Technology and Power Electronics Applications / C. Wesley Tipton IV and Stephen B. Bayne -- 4. Advances in Selective Doping of SiC Via Ion Implantation / A. Hallen [and others] -- 5. Power SiC MOSFETS / I. Sankin and J.B. Casady -- 6. Power and RF BJTs in 4H-SiC : Device Design and Technology / Anant Agarwal, Sei-Hyung Ryu, and John Palmour
Control code
ocm56123954
Dimensions
unknown
Extent
1 online resource (xiii, 212 pages)
Form of item
online
Isbn
9781580537407
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other physical details
illustrations
http://library.link/vocab/ext/overdrive/overdriveId
ebl227682
http://library.link/vocab/recordID
.b22181921
Specific material designation
remote
System control number
  • (OCoLC)56123954
  • pebcs1580537405

Library Locations

    • Deakin University Library - Geelong Waurn Ponds CampusBorrow it
      75 Pigdons Road, Waurn Ponds, Victoria, 3216, AU
      -38.195656 144.304955
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