The Resource HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France, edited by Daniel Alquier

HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France, edited by Daniel Alquier

Label
HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France
Title
HeteroSiC & WASMPE 2011
Title remainder
selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France
Statement of responsibility
edited by Daniel Alquier
Title variation
Selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France
Contributor
Subject
Genre
Language
eng
Summary
The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings present the latest developments in Silicon Carbide, and the prospects for Gallium Nitride (GaN on Si, SiC, sapphire and free-standing) and Diamond power electronics. Finally, the progress made in Graphene technology, such as its introduction into devices and its relationship to SiC epitaxial material, is considered
Member of
Cataloging source
CUY
Dewey number
621.3815/2
Illustrations
  • illustrations
  • charts
Index
index present
LC call number
TK7871.85
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
Series statement
Materials science forum,
Series volume
v. 711
Target audience
specialized
Label
HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France, edited by Daniel Alquier
Publication
Antecedent source
unknown
Bibliography note
Includes bibliographical references and index
http://library.link/vocab/branchCode
  • net
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
multicolored
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
  • HeteroSiC & WASMPE 2011; Preface, Sponsors and Committees; Table of Contents; Chapter 1: SiC Heteroepitaxial Growth; Progress in 3C-SiC Growth and Novel Applications; Elimination of Twin Boundaries when Growing 3C-SiC Heteroepitaxial by Vapour-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate; CVD Growth of 3C-SiC on 4H-SiC Substrate; The Influence of C3H8 and CBr4 on Structural and Morphological Properties of 3C-SiC Layers; Structural Characterization of Heteroepitaxial 3C-SiC; Consideration on the Thermal Expansion of 3C-SiC Epitaxial Layer on Si Substrates
  • Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETsThe Influence of Gate Material, SiO2 Fabrication Method and Gate Edge Effect on Interface Trap Density in 3C-SiC MOS Capacitors; Electrical Characteristics of SiC UV-Photodetector Device from the P-I-N Structure Behaviour to the Junction Barrier Schottky Structure Behaviour; Visible and Deep Ultraviolet Study of SiC/SiO2 Interface; High Temperature Capability of High Voltage 4H-SiC JBS; Parallel and Serial Association of SiC Light Triggered Thyristors
  • Epitaxial Growth of 3C-SiC onto Silicon Substrate by VLS Transport Using CVD-Grown 3C-SiC Seeding LayerChapter 2: Microsystems and Microstructures Based on SiC; Study of 3C-SiC Mechanical Resonators, Filters and Mixers; Mechanical Proprieties and Residual Stress Evaluation on Heteroepitaxial 3C-SiC/Si for MEMS Application; Strain Field Analysis of 3C-SiC Free-Standing Microstructures by Micro-Raman and Theoretical Modelling; Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition
  • Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETsChapter 4: Characterization: Devices and Material; Structural Characterization of Graphene Grown by Thermal Decomposition of Off-Axis 4H-SiC (0001); Seeding Layer Influence on the Low Temperature Photoluminescence Intensity of 3C-SiC Grown on 6H-SiC by Sublimation Epitaxy; Dose Influence on Physical and Electrical Properties of Nitrogen Implantation in 3C-SiC on Si; On Applicability of Time-Resolved Optical Techniques for Characterization of Differently Grown 3C-SiC Crystals and Heterostructures
Control code
ocn779824094
Dimensions
unknown
Extent
1 online resource
File format
unknown
Form of item
online
Isbn
9783038136712
Level of compression
unknown
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other physical details
illustrations
Quality assurance targets
not applicable
http://library.link/vocab/recordID
.b30776831
Reformatting quality
unknown
Sound
unknown sound
Specific material designation
remote
System control number
  • (OCoLC)779824094
  • pebcs3038136719

Library Locations

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