The Resource High performance devices : proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices, Rensselaer Polytechnic Institute, 4-6 August 2004, editor, Robert E. Leoni III

High performance devices : proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices, Rensselaer Polytechnic Institute, 4-6 August 2004, editor, Robert E. Leoni III

Label
High performance devices : proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices, Rensselaer Polytechnic Institute, 4-6 August 2004
Title
High performance devices
Title remainder
proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices, Rensselaer Polytechnic Institute, 4-6 August 2004
Statement of responsibility
editor, Robert E. Leoni III
Creator
Contributor
Subject
Genre
Language
eng
Summary
This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas : high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics
Cataloging source
World Scientific Publishing
Dewey number
621.395
Illustrations
illustrations
Index
index present
Literary form
non fiction
Nature of contents
  • dictionaries
  • bibliography
Label
High performance devices : proceedings of the 2004 IEEE Lester Eastman Conference on High Performance Devices, Rensselaer Polytechnic Institute, 4-6 August 2004, editor, Robert E. Leoni III
Publication
Bibliography note
Includes bibliographical references and index
http://library.link/vocab/branchCode
  • net
Carrier category
online resource
Carrier category code
cr
Carrier MARC source
rdacarrier
Color
black and white
Content category
text
Content type code
txt
Content type MARC source
rdacontent
Contents
Vertical scaling of type I InP HBT with F[symbol]> 500 GHz / J.W. Lai, W. Hafez and M. Feng -- Numerical investigation of the effect of doping profiles on the high frequency performance of InP/InGaAs super scaled HBTs / D. Veksler [and others] -- Tunnel diode/transistor differential comparator / Q. Liu, S. Sutar and A. Seabaugh -- Benchmark results for high-speed 4-bit accumulators implemented in indium phosphide DHBT technology / S.E. Turner and D.E. Kotecki -- Atomically flat III-antimonide epilayers grown using liquid phase epitaxy / A. Kumar, S. Sridaran and P.S. Dutta -- Native defect compensation in III-antimonide bulk substrates / R. Pino, Y. Ko and P.S. Dutta -- Noise and THz rectification characteristics of zero-bias quantum tunneling Sb-heterostructure diodes / A. Luukanen [and others] -- Temperature dependence of terahertz emission from silicon devices doped with boron / R.T. Troeger [and others] -- Two-dimensional analytical modeling and simulation of retrograde doped HMG MOSFET / R.S. Gupta [and others] -- Electrical effects of DNA molecules on silicon field effect transistor / G. Xuan [and others] -- Analysis of operational transconductance amplifier for application in GHz frequency range / A. Ghori and P. Ghosh -- Lifetime of nonequilibrium carriers in AlGaN epilayers with high Al molar fraction / J. Mickevicius [and others] -- Noise characteristics of 340 nm and 280 nm GaN-based light emitting diodes / S. Sawyer [and others] -- Junction-temperature measurements in GaN UV light-emitting diodes using the diode forward voltage / Y. Xi and E.F. Schubert -- High speed 0.9 [symbol], m lateral P-I-N photodetectors fabricated in a standard commercial GaAs VLSI process / W.P. Giziewicz, C.G. Fonstad Jr. and S. Prasad -- Self-guiding in low-index-contrast planar photonic crystals / C. Chen [and others] -- Omni-directional reflector using a low refractive index material / J.-Q. Xi [and others] -- MBE-grown AlGaN/GaN HEMTs on SiC / S. Rajan [and others] -- Stable high power GaN-on-GaN HEMT / K.K. Chu, P.C. Chao and J.A. Windyka -- Thick GaN layer grown by Ga vapor transport technique / H. Wu [and others] -- Dependence of RF performance of GaN/AlGaN HEMTs upon AlGaN barrier layer variation / E. Faraclas [and others] -- Selective dry etching of GaN over A1GaN in BC1[symbol]/SF[symbol] mixtures / D. Buttari [and others] -- Low frequency noise parameters in an AlGaN/GaN heterostructure with 33% and 75% Al mole fraction / S.A. Vitusevich [and others] -- Trap behavior in AlGaN/GaN HEMTs by post-gate-annealing / H. Kim, J. Lee and W. Lu -- Photocapacitance of GaAs thin-film structures fabricated on a semi-insulating compensated substrate / N.B. Gorev [and others] -- Unstrained InAlN/GaN HEMT structure / M. Neuburger [and others] -- GaN MOS-HEMT using atomic layer deposition A1[symbol]O[symbol] as gate dielectric and surface passivation / P.D. Ye [and others] -- Dependence of electron mobility on EPI channel doping in GaN MOSFETs / J. Ruan [and others] -- Fabrication of self-aligned T-gate AlGaN/GaN high electron mobility transistors / J. Lee [and others] -- A new field-plated GaN HEMT structure with improved power and noise performance / H. Xu [and others] -- Noise characteristics of field-plated GaN HEMTs / Y.-F. Wu [and others] -- Temperature dependent I-V characteristics of AlGaN/GaN HBTs and GaN BJTs / H.G. Xing and U.K. Mishra -- Analysis of high DC current gain structures for GaN/InGaN/GaN HBTs / J.C. Li [and others] -- Analysis of GaN HBT structures for high power, high efficiency microwave amplifiers / D.M. Keogh [and others] -- Leaky surface acoustic waves in single-crystal AIN substrate / G. Bu [and others] -- High linearity GaN HEMT power amplifier with pre-linearization gate diode / S. Xie [and others] -- Spice model of AlGaN/GaN HEMTs and simulation of VCO and power amplifier / S.S. Islam and A.F.M. Anwar -- High power, drift-free 4H-SiC PIN diodes / M.K. Das [and others] -- Design of high voltage 4H-SiC superjunction Schottky rectifiers / L. Zhu, P. Losee and T.P. Chow -- High-voltage diamond Schottky rectifiers / W. Huang [and others] -- 2 kV 4H-SiC DMOSFETs for low loss high frequency switching applications / S.H. Ryu [and others] -- Simulation study on breakdown behavior of field-plate SiC MESFETs / H.-Y. Cha [and others] -- Effects of buffer layer thickness and doping concentration on SiC MESFET characteristics / 5. S. Mukherjee and S.S. Islam -- Analytical model for non-self aligned buried P-layer SiC MESFET / R.S. Gupta [and others] -- Ion implanted SiC static induction transistor with 107 W output power and 59% power added efficiency under CW operation at 750 MHz / G.C. De Salvo [and others] -- Influence of the N-diffusion layer on the channel current and the breakdown voltage in 4H-SiC SIT / Y.C. Choi [and others]
Control code
ocn747539660
Dimensions
other
Extent
xvii, 919 pages
Form of item
online
Isbn
9789812702036
Media category
computer
Media MARC source
rdamedia
Media type code
c
Other physical details
illustrations
http://library.link/vocab/recordID
.b22865421
Reproduction note
Electronic reproduction.
Sound
unknown sound
Specific material designation
remote
System control number
  • (OCoLC)747539660
  • pebcs9812702032

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