CMOS analog design using all-region MOSFET modeling, Márcio Cherem Schneider and Carlos Galup-Montoro

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CMOS analog design using all-region MOSFET modeling, Márcio Cherem Schneider and Carlos Galup-Montoro

Statement of responsibility

Márcio Cherem Schneider and Carlos Galup-Montoro

Instantiates

• CMOS analog design using all-region MOSFET modeling

Publication

• Cambridge, Cambridge University Press, 2010

Bibliography note

Includes bibliographical references and index

Carrier category

online resource

Carrier category code

cr

Carrier MARC source

rdacarrier

Content category

text

Content type code

txt

Content type MARC source

rdacontent

Contents

Cover -- Half-title -- Title -- Copyright -- Dedication -- Contents -- Preface -- 1 Introduction to analog CMOS design -- 1.1. Analog design -- 1.1.1. The need for analog design -- 1.1.2. Tradeoffs in analog design -- 1.1.3. The importance of component modeling -- 1.2. Bipolar and metal8211;oxide8211;semiconductor field-effect transistors -- 1.2.1. p8211;n Junctions -- 1.2.2. Bipolar junction transistors -- 1.2.3. MOS field-effect transistors -- 1.2.4. Important differences between BJTs and MOSFETs -- 1.3. Analog bipolar and MOS integrated circuits -- 1.3.1. Analysis and design of integrated circuits -- 1.3.2. Design of common-emitter and common-source amplifiers -- Problems -- References -- 2 Advanced MOS transistor modeling -- 2.1 Fundamentals of the MOSFET model -- 2.1.1 Electrons and holes in semiconductors -- 2.1.2 The two-terminal MOS structure -- 2.1.3 Accumulation, depletion, and inversion (for p-type substrates) -- 2.1.4 The small-signal equivalent circuit of the two-terminal MOS (for p-type substrates) -- 2.1.5 The three-terminal MOS structure and the unified charge-control model (UCCM) -- 2.1.6 The pinch-off voltage -- 2.1.7 The Pao8211;Sah exact I-V model -- 2.1.8 A charge-sheet formula for the current -- 2.1.9 A charge-control compact model -- 2.1.10 Threshold voltage -- 2.2 A design-oriented MOSFET model -- 2.2.1 Forward and reverse components of the drain current -- 2.2.2 Universal dc characteristics -- 2.2.3 MOSFET operation in weak and strong inversion -- 2.2.4 Small-signal transconductances -- 2.3 Dynamic MOSFET models -- 2.3.1 Stored charges -- 2.3.2 Capacitive coefficients -- 2.3.3 Capacitances of the extrinsic transistor -- 2.3.4 A non-quasi-static small-signal model -- 2.3.5 A quasi-static small-signal model -- 2.3.6 The intrinsic transition frequency -- 2.4 Shorthannel effects in MOSFETs -- 2.4.1 Effective mobility -- 2.4.2 Velocity saturation -- 2.4.3 Channel-length modulation -- 2.4.4 Drain-induced barrier lowering -- 2.4.5 Output conductance in saturation -- 2.4.6 Gate tunneling currents -- 2.4.7 Bulk current -- Appendices -- A2.1 Semiconductor charges -- A2.2 Drain- and source-associated inversion charges -- A2.3 Summary of n-channel MOSFET equations: UCCM, current, charges, transconductances, and capacitances including short-channel effects -- A2.4 An alternative low-frequency small-signal model of the MOSFET in saturation -- Problems -- References -- 3 CMOS technology, components, and layout techniques -- 3.1 An overview of CMOS technology -- 3.1.1 Basic process steps in monolithic IC fabrication -- 3.1.2 Generic deep-submicron CMOS process flow -- 3.1.3 Main parameters in 350- 180- and 90-mm processes -- 3.2 Devices in CMOS technology -- 3.2.1 Resistors -- 3.2.2 Capacitors -- 3.2.3 Inductors -- 3.2.4 Bipolar transistors -- 3.3 Latchup -- 3.4 Analog layout issues -- 3.4.1 Optical lithography -- 3.4.2 Mask layout and design rules -- 3.4.3 MOSFET layout -- Problems -- References -- 4 Temporal and spatial fluctuations in MOSFETs -- 4.1 Types of noise -- 4.1.1 Thermal noise -- 4.1.2 Shot noise -- 4.1.3 Flicker noise -- 4.2. Modeling the drainurrent fluctuations in MOSFETs -- 4.3 Thermal noise in MOSFETs -- 4.3.1 Channel thermal noise -- 4.3.2 Shorth-channel effects on channel thermal noise -- 4.3.3 I

Control code

ocn664682072

Dimensions

unknown

Extent

1 online resource (xvii, 486 pages)

Form of item

online

Isbn

9780511803840

Media category

computer

Media MARC source

rdamedia

Media type code

c

Other control number

9786612749117

Other physical details

illustrations

http://library.link/vocab/ext/overdrive/overdriveId

• 274911
• 77048e84-3da2-4e58-b6bc-61f3b5f2e1d4

Specific material designation

remote

System control number

• (OCoLC)664682072
• cbo0511795610